THEORY OF NEGATIVE-RESISTANCE OF JUNCTION FIELD-EFFECT TRANSISTORS

被引：8

作者：

MIZUNO, H

KANO, G

TAKAGI, H

TERAMOTO, I

机构：

[1] MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN

[2] MATSUSHITA ELECTR CORP,BOARD MANAGEMENT,TAKATSUKI,OSAKA,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 02期

关键词：

D O I：

10.1109/JSSC.1976.1050720

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：313 / 317

页数：5

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