BURNOUT OF JUNCTION FIELD-EFFECT TRANSISTORS

被引：1

作者：

LONG, DM ^{[1
]}

SWANT, DH ^{[1
]}

机构：

[1] GE,RE-ENTRY & ENVIRONM SYST DIV,PHILADELPHIA,PA 19101

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 06期

关键词：

D O I：

10.1109/TNS.1973.4327386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：149 / 157

页数：9

共 50 条

[1] INTRODUCTION TO JUNCTION FIELD-EFFECT TRANSISTORS.
[J]. 1600, (20):
[2] NOISE MEASUREMENTS ON JUNCTION FIELD-EFFECT TRANSISTORS
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[3] An improved junction capacitance model for junction field-effect transistors
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[4] DC CHARACTERISTICS OF JUNCTION GATE FIELD-EFFECT TRANSISTORS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (06) : 531 - &
[5] THE GATE CURRENT NOISE OF JUNCTION FIELD-EFFECT TRANSISTORS
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[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (01) : 93 - 102
[6] BIPOLAR OPERATION OF POWER JUNCTION FIELD-EFFECT TRANSISTORS
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[J]. ELECTRONICS LETTERS, 1980, 16 (08) : 300 - 301
[7] RADIATION EFFECTS IN GAAS JUNCTION FIELD-EFFECT TRANSISTORS
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (05) : 1343 - 1354
[8] NEUTRON RADIATION EFFECTS IN JUNCTION FIELD-EFFECT TRANSISTORS
NAIK, SS
OLDHAM, WG
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (05) : 9 - +
[9] EFFECT OF MAGNETIC-FIELD ON CHARACTERISTICS OF JUNCTION FIELD-EFFECT TRANSISTORS (JFET)
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[J]. INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1975, 13 (08) : 560 - 562
[10] POTENTIAL, FIELD AND CARRIER DISTRIBUTION IN CHANNEL OF JUNCTION FIELD-EFFECT TRANSISTORS
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[J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 139 - &

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