NEGATIVE-RESISTANCE OF A MODIFIED INSULATED-GATE FIELD-EFFECT TRANSISTOR

被引：14

作者：

LEHOVEC, K

ZULEEG, R

机构：

[1] UNIV SO CALIF,ELECTR SCI LAB,LOS ANGELES,CA 90007

[2] MCDONNEL DOUGLAS ASTRONAUT CO,HUNTINGDON BEACH,CA 92647

来源：

PROCEEDINGS OF THE IEEE | 1974年 / 62卷 / 08期

关键词：

D O I：

10.1109/PROC.1974.9575

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1163 / 1165

页数：3

共 50 条

[1] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR
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