MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIETHYLGALLIUM AND ARSINE

被引：23
|
作者：
HORIGUCHI, S
KIMURA, K
KAMON, K
MASHITA, M
SHIMAZU, M
MIHARA, M
ISHII, M
机构：
[1] Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 12期
关键词：
D O I：
10.1143/JJAP.25.L979
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
SEMICONDUCTING GALLIUM ARSENIDE
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页码：L979 / L982
页数：4
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