CHEMICAL BEAM EPITAXIAL-GROWTH OF GAAS FROM TERTIARYBUTYLARSINE AND TRIETHYLGALLIUM PRECURSORS

被引：6
|
作者：
AITLHOUSS, M [1 ]
CASTANO, JL [1 ]
PIQUERAS, J [1 ]
机构：
[1] UNIV AUTONOMA MADRID,DEPT FIS APLICADA,MICROELECTR LAB,E-28049 MADRID,SPAIN
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期
关键词：
METALORGANICS; CHEMICAL BEAM EPITAXY;
D O I：
10.1016/0921-5107(94)90037-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Triethylgallium and precracked tertiarybutylarsine (TBAs) were used as precursors for the chemical beam epitaxial growth of GaAs. The main decomposition products of TBAs are AsH free radicals, AsH3, isobutane and isobutene. Growth rates up to 0.68 monolayers s(-1) were obtained. All the grown layers show p-type conductivity with a background acceptor concentration in the mid 10(16) cm(-3) range with a compensation ratio of about 0.3. Photoluminescence spectra show that carbon is the main acceptor impurity.
引用
下载
收藏
页码：155 / 157
页数：3
相关论文
共 50 条
12345