MOLECULAR BEAM EPITAXIAL GROWTH OF GaAs USING TRIETHYLGALLIUM AND As4.

被引：0

作者：

Kimura, Kozo ^{[1
]}

Horiguchi, Seishi ^{[1
]}

Kamon, Koichi ^{[1
]}

Mashita, Masao ^{[1
]}

Mihara, Minoru ^{[1
]}

Ishii, Makoto ^{[1
]}

机构：

[1] Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1987年 / 26卷 / 03期

关键词：

MOLECULAR BEAM EPITAXY - Applications - ORGANOMETALLICS - Applications;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The growth of undoped GaAs layers using molecular beams of triethylgallium (TEG) and elemental arsenic (As//4) was studied. All epilayers showed a p-type conductivity caused by carbon as the main residual acceptor. The carrier concentration decreased as the As//4-to-TEG pressure ratio was increased, resulting in the lowest value of p equals 3 multiplied by 10**1**4 cm** minus **3 at an As//4-to-TEG pressure ratio of 67. A mass spectrometric analysis during growth revealed the formation of ethylarsine compounds.

引用

页码：419 / 422

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