A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics

A PNPN tunnel field effect transistor (TFET) with a high-k gate dielectric and a low-k fringe dielectric is introduced. The effects of the gate and fringe electric fields on the TFET's performance were investigated through two-dimensional simulations. The results showed that a high gate dielectric constant is preferable for enhancing the gate control over the channel, while a low fringe dielectric constant is useful to increase the band-to-band tunneling probability. The TFET device with the proposed structure has good switching characteristics, enhanced on-state current, and high process tolerance. It is suitable for low-power applications and could become a potential substitute in next-generation complementary metal-oxide-semiconductor technology.