Tunnel field effect transistor with increased ON current, low-k spacer and high-k dielectric

被引：111

作者：

Anghel, Costin ^{[1
]}

Chilagani, Prathyusha ^{[1
]}

Amara, Amara ^{[1
]}

Vladimirescu, Andrei ^{[1
]}

机构：

[1] ISEP, F-75270 Paris, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 12期

关键词：

field effect transistors; high-k dielectric thin films; low-k dielectric thin films; tunnelling;

D O I：

10.1063/1.3367880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An improved double-gate tunnel field-effect transistor structure with superior performance is proposed. The originality consists in the introduction of a low-k spacer that is combined with a high-k gate dielectric. Numerical simulations demonstrate that the use of the low-k spacer and high-k gate dielectric leads to a high on-current, I(ON), and reduced subthreshold slope. The proposed structure increases I(ON) by a factor of 3.8 and reduces the subthreshold slope by a factor of 2 compared to other structures described in literature.

引用

页数：3

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