A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics

被引：11

作者：

Ning, Cui ^{[1
]}

Liang Renrong ^{[1
]}

Jing, Wang ^{[1
]}

Wei, Zhou ^{[1
]}

Jun, Xu ^{[1
]}

机构：

[1] Tsinghua Univ, Tsinghua Natl Lab Informat Sci & Technol, Inst Microelect, Beijing 100084, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2012年 / 33卷 / 08期

基金：

中国国家自然科学基金;

关键词：

TFET; subthreshold swing; high-k dielectric; low-k dielectric; fringe electric field;

D O I：

10.1088/1674-4926/33/8/084004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A PNPN tunnel field effect transistor (TFET) with a high-k gate dielectric and a low-k fringe dielectric is introduced. The effects of the gate and fringe electric fields on the TFET's performance were investigated through two-dimensional simulations. The results showed that a high gate dielectric constant is preferable for enhancing the gate control over the channel, while a low fringe dielectric constant is useful to increase the band-to-band tunneling probability. The TFET device with the proposed structure has good switching characteristics, enhanced on-state current, and high process tolerance. It is suitable for low-power applications and could become a potential substitute in next-generation complementary metal-oxide-semiconductor technology.

引用

页数：6

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