Newly Synthesized High-k Polymeric Dielectrics with Cyclic Carbonate Functionality for Highly Stability Organic Field-Effect Transistor Applications

被引:11
|
作者
Xu, Ting [1 ]
Liu, Yifan [2 ]
Bu, Yunlong [3 ]
Shu, Shiyao [3 ]
Fan, Shuangqing [1 ]
Cao, Minghui [1 ]
Liu, Tong [1 ]
Zou, Jiawei [2 ]
Su, Jie [1 ,3 ]
机构
[1] Qingdao Univ, Coll Elect & Informat Engn, Qingdao 266071, Peoples R China
[2] Chinese Acad Sci, Changchun Inst Appl Chem, Changchun 130022, Peoples R China
[3] Qingdao Univ, Coll Phys Sci, Qingdao 266071, Peoples R China
来源
ADVANCED ELECTRONIC MATERIALS | 2023年 / 9卷 / 01期
基金
中国国家自然科学基金;
关键词
flexible; high-k polymer dielectrics; integrated devices; operational stability; organic field-effect transistors; THIN-FILM TRANSISTORS; GATE DIELECTRICS; TEMPERATURE; CONSTANT; DENSITY;
D O I
10.1002/aelm.202200984
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Organic field-effect transistors (OFETs) with low-voltage-operating high-stability are regarded as one of the key components of future electronics. However, it remains a challenge to enhance bias-stress stability, mechanical durability and environmental adaptability while reducing the operating voltage of the flexible OFETs. In this study, a new strategy of introducing high-dipole-moment groups into polymer side chains to enhance the intensity of polarization was proposed. This strategy can redirect cyclic carbonate side chains of high-dipole groups under the action of electric fields and realize stable operation and efficient charge transfer. The experiments showed that high-performance flexible OFETs were mainly attributed to the synthesized polymers through molecular structure designing which not only have high dielectric constant (k > 5) and high electrical insulating property but also favor the growth of organic semiconductor films. The flexible OFETs still showed excellent mechanical flexibility, high electrical, thermal and humidity stability. In addition, highly OFETs were applied into a floating-gate memory with fullerene (C-60) embedded charge memory layer and an integrated one-transistor-one-transistor memory cell. They exhibited excellent memory performance with a large memory window (8.5 V), current ratio (10(3)), stable retention (2 x 10(4) s), cyclic endurance (200 cycles), multi-level memory (over 4 levels) and non-destructivity.
引用
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页数:14
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