DEGRADATION OF LOW-NOISE MICROWAVE GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS DUE TO HIGH-POWER IMPULSE MICROWAVE INTERFERENCE

被引：0

作者：

ANTIPIN, VV

GODOVITSYN, VA

GROMOV, DV

RAVAYEV, AA

机构：

来源：

TELECOMMUNICATIONS AND RADIO ENGINEERING | 1993年 / 48卷 / 10期

关键词：

IMPULSE MICROWAVE INTERFERENCE; SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS; CATASTROPHIC BREAKDOWN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The behavior of typical low-noise GaAs microwave Schottky-barrier field-effect transistors when acted upon by high-power impulse microwave interference for different levels of incident power is considered. A method of carrying out experiments using a magnetron microwave radiopulse generator is described.

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页码：87 / 90

页数：4

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