Degradation of low-noise microwave gallium arsenide Schottky-barrier field-effect transistors due to high-power impulse microwave interference

被引：0

作者：

Antipin, V.V.

Godovitsyn, V.A.

Gromov, D.V.

Ravayev, A.A.

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来源：

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | 1993年 / 48卷 / 10期

关键词：

Current voltage characteristics - Degradation - Electric current measurement - Electromagnetic wave interference - Gates (transistor) - Pulse generators - Semiconducting gallium arsenide;

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学科分类号：

摘要：

The behavior of typical low-noise GaAs microwave Schottky-barrier field-effect transistors when acted upon by high-power impulse microwave interference for different levels of incident power is considered. A method of carrying out experiments using a magnetron microwave radio-pulse generator is described.

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页码：87 / 90

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