Degradation of low-noise microwave gallium arsenide Schottky-barrier field-effect transistors due to high-power impulse microwave interference

被引：0
|
作者：
Antipin, V.V.
Godovitsyn, V.A.
Gromov, D.V.
Ravayev, A.A.
机构：
来源：
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | 1993年 / 48卷 / 10期
关键词：
Current voltage characteristics - Degradation - Electric current measurement - Electromagnetic wave interference - Gates (transistor) - Pulse generators - Semiconducting gallium arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The behavior of typical low-noise GaAs microwave Schottky-barrier field-effect transistors when acted upon by high-power impulse microwave interference for different levels of incident power is considered. A method of carrying out experiments using a magnetron microwave radio-pulse generator is described.
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页码：87 / 90
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