HIGH-SPEED GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS

被引：36

|

作者：

DRANGEID, KE

SOMMERHALDER, R

WALTER, W

机构：

来源：

ELECTRONICS LETTERS | 1970年 / 6卷 / 08期

关键词：

D O I：

10.1049/el:19700159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：228 / +

页数：1

相关论文

共 50 条

[1] GALLIUM-ARSENIDE PHOSPHIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR
PANCHOLY, RK
GRANNEMANN, WW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : 430 - 433
[2] SILICON AND GALLIUM ARSENIDE FIELD-EFFECT TRANSISTORS WITH SCHOTTKY-BARRIER GATE
STATZ, H
VONMUNCH, W
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 111 - &
[3] GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS
MARSHALL, S
[J]. SOLID STATE TECHNOLOGY, 1972, 15 (10) : 27 - +
[4] BISTABLE SWITCHING ON GALLIUM-ARSENIDE SCHOTTKY GATE FIELD-EFFECT TRANSISTORS
ROSSEL, P
CABOT, JJ
GRAFFEUI.J
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (09) : 510 - 511
[5] GALLIUM-ARSENIDE DUAL SCHOTTKY-BARRIER DIODES
MINDEN, HT
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (10) : 1185 - &
[6] HIGH-BURNOUT GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES
SWALLOW, GH
HANSOM, AM
OXLEY, TH
[J]. JOURNAL OF SCIENCE AND TECHNOLOGY, 1973, 40 (03): : 126 - 131
[7] BACKGATING IN GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS
GERGEL, VA
ILICHEV, EA
LUKYANCHENKO, AI
POLTORATSKII, EA
SHCHAMKHALOV, KS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (05): : 445 - 449
[8] STATIC CHARACTERISTICS OF GALLIUM-ARSENIDE SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
STAROSELSKII, VI
[J]. SOVIET MICROELECTRONICS, 1982, 11 (03): : 122 - 125
[9] DEGRADATION OF LOW-NOISE MICROWAVE GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS DUE TO HIGH-POWER IMPULSE MICROWAVE INTERFERENCE
ANTIPIN, VV
GODOVITSYN, VA
GROMOV, DV
RAVAYEV, AA
[J]. TELECOMMUNICATIONS AND RADIO ENGINEERING, 1993, 48 (10) : 87 - 90
[10] TEMPERATURE DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT IN GALLIUM-ARSENIDE
HACKAM, R
HARROP, P
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (05) : 669 - &

← 1 2 3 4 5 →