DEGRADATION OF LOW-NOISE MICROWAVE GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS DUE TO HIGH-POWER IMPULSE MICROWAVE INTERFERENCE

被引：0
|
作者：
ANTIPIN, VV
GODOVITSYN, VA
GROMOV, DV
RAVAYEV, AA
机构：
来源：
TELECOMMUNICATIONS AND RADIO ENGINEERING | 1993年 / 48卷 / 10期
关键词：
IMPULSE MICROWAVE INTERFERENCE; SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS; CATASTROPHIC BREAKDOWN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The behavior of typical low-noise GaAs microwave Schottky-barrier field-effect transistors when acted upon by high-power impulse microwave interference for different levels of incident power is considered. A method of carrying out experiments using a magnetron microwave radiopulse generator is described.
引用
收藏
页码：87 / 90
页数：4
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