DEGRADATION OF LOW-NOISE MICROWAVE GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS DUE TO HIGH-POWER IMPULSE MICROWAVE INTERFERENCE

被引：0

作者：

ANTIPIN, VV

GODOVITSYN, VA

GROMOV, DV

RAVAYEV, AA

机构：

来源：

TELECOMMUNICATIONS AND RADIO ENGINEERING | 1993年 / 48卷 / 10期

关键词：

IMPULSE MICROWAVE INTERFERENCE; SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS; CATASTROPHIC BREAKDOWN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The behavior of typical low-noise GaAs microwave Schottky-barrier field-effect transistors when acted upon by high-power impulse microwave interference for different levels of incident power is considered. A method of carrying out experiments using a magnetron microwave radiopulse generator is described.

引用

页码：87 / 90

页数：4

共 50 条

[21] Analytic calculation of the gate edge capacitance for schottky-barrier field-effect transistors and metallization of contacts on gallium arsenide
Adamov, YF
RADIOTEKHNIKA I ELEKTRONIKA, 1996, 41 (07): : 890 - 894
[22] LOW-NOISE GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTOR PREAMPLIFIERS FOR STOCHASTIC BEAM COOLING SYSTEMS
LESKOVAR, B
LO, CC
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (04) : 2259 - 2261
[23] NOISE MODELS FOR GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS AT ROOM AND CRYOGENIC TEMPERATURES
ROBERTSON, RC
HA, TT
INTERNATIONAL JOURNAL OF ELECTRONICS, 1986, 61 (04) : 433 - 440
[24] NOISE BEHAVIOR AND PRACTICAL REALIZATION OF GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS FOR MICROWAVES
BAUDET, P
ACTA ELECTRONICA, 1980, 23 (02): : 111 - 118
[25] LOW-NOISE GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTOR-AMPLIFIER FOR 4-GHZ RADIO
KNERR, RH
SWAN, CB
BELL SYSTEM TECHNICAL JOURNAL, 1978, 57 (03): : 479 - 490
[26] BEAM-LEAD SCHOTTKY-BARRIER DIODES FOR LOW-NOISE INTEGRATED MICROWAVE MIXERS
CERNIGLIA, NP
TONNER, RC
BERKOVITS, G
SOLOMON, AH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (09) : 674 - +
[27] BEAM-LEAD SCHOTTKY-BARRIER DIODES FOR LOW-NOISE INTEGRATED MICROWAVE MIXERS
CERNIGLI.NP
TONNER, RC
BERKOVIT.G
SOLOMON, AH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (06) : 428 - &
[28] LOW-NOISE MICROWAVE GAAS FIELD-EFFECT TRANSISTOR
BAUDET, P
BINET, M
BOCCONGIBOD, D
PHILIPS TECHNICAL REVIEW, 1980, 39 (10): : 269 - 276
[29] EQUIVALENT CIRCUIT OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR AT MICROWAVE-FREQUENCIES
DAWSON, RH
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1975, MT23 (06) : 499 - 501
[30] CHARACTERISTICS AND MECHANISM OF 1/F NOISE IN GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
FOLKES, PA
APPLIED PHYSICS LETTERS, 1986, 48 (05) : 344 - 346

← 1 2 3 4 5 →