LOW-NOISE MICROWAVE GAAS FIELD-EFFECT TRANSISTOR

被引：0

作者：

BAUDET, P ^{[1
]}

BINET, M ^{[1
]}

BOCCONGIBOD, D ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

PHILIPS TECHNICAL REVIEW | 1980年 / 39卷 / 10期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A GaAs MESFET with a gate length of 0. 5 mu m was developed. The correct geometry has been obtained by self-alignment of the source and drain contacts. The microwave performance is excellent: a minimum noise figure of 1. 9 db at 12 GHz and an associated gain of 7. 8 db were obtained.

引用

页码：269 / 276

页数：8

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