LOW-NOISE MICROWAVE GAAS FIELD-EFFECT TRANSISTOR

被引：0
|
作者：
BAUDET, P [1 ]
BINET, M [1 ]
BOCCONGIBOD, D [1 ]
机构：
[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
来源：
PHILIPS TECHNICAL REVIEW | 1980年 / 39卷 / 10期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A GaAs MESFET with a gate length of 0. 5 mu m was developed. The correct geometry has been obtained by self-alignment of the source and drain contacts. The microwave performance is excellent: a minimum noise figure of 1. 9 db at 12 GHz and an associated gain of 7. 8 db were obtained.
引用
收藏
页码：269 / 276
页数：8
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