GAAS NEGATIVE CONDUCTANCE JUNCTION FIELD-EFFECT TRANSISTOR

被引：6
|
作者：
TUCKER, TW [1 ]
YOUNG, L [1 ]
机构：
[1] UNIV BRITISH COLUMBIA,ELECT ENGN DEPT,VANCOUVER 8,BRITISH COLUMBI,CANADA
来源：
SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 01期
关键词：
D O I：
10.1016/0038-1101(74)90110-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：31 / 34
页数：4
相关论文
共 50 条
  • [1] Graphene Junction Field-Effect Transistor
    Ou, Tzu-Min
    Borsa, Tomoko
    Van Zeghbroeck, Bart
    [J]. 2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2015, : 139 - 140
  • [2] SUBSURFACE JUNCTION FIELD-EFFECT TRANSISTOR
    MALHI, SDS
    SALAMA, CAT
    DONNISON, WR
    BARBER, HD
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (12) : 1447 - 1454
  • [3] AN EPITAXIAL GAAS FIELD-EFFECT TRANSISTOR
    HOOPER, WW
    LEHRER, WI
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07): : 1237 - &
  • [4] AN EPITAXIAL GAAS FIELD-EFFECT TRANSISTOR
    SHAPIRO, JS
    GIORGIO, V
    [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (11) : 2085 - &
  • [5] A MICROWAVE GAAS FIELD-EFFECT TRANSISTOR
    HOOPER, WW
    HOWER, PL
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (06) : 414 - &
  • [6] Junction Field-Effect Transistor Based on GaAs Core-Shell Nanowires
    Benner, O.
    Lysov, A.
    Gutsche, C.
    Keller, G.
    Schmidt, C.
    Prost, W.
    Tegude, F. J.
    [J]. 2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013,
  • [7] NONLINEARITY OF FIELD-EFFECT TRANSISTOR OUTPUT CONDUCTANCE
    DZARDANOV, AL
    SOINA, NV
    FOGELSON, MS
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1982, 27 (02): : 374 - 377
  • [8] DISTRIBUTION FUNCTION OF HOPPING CONDUCTANCE FLUCTUATIONS OF A SHORT GAAS FIELD-EFFECT TRANSISTOR CHANNEL
    ORLOV, AO
    RAIKH, ME
    RUZIN, IM
    SAVCHENKO, AK
    [J]. SOLID STATE COMMUNICATIONS, 1989, 72 (02) : 169 - 172
  • [9] A VERTICAL-JUNCTION FIELD-EFFECT TRANSISTOR
    MAYER, DC
    MASNARI, NA
    LOMAX, RJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) : 956 - 961
  • [10] INPUT CAPACITY OF A JUNCTION FIELD-EFFECT TRANSISTOR
    MISRA, M
    PRASAD, HC
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02): : 227 - &
12345