GAAS NEGATIVE CONDUCTANCE JUNCTION FIELD-EFFECT TRANSISTOR

被引：6

作者：

TUCKER, TW ^{[1
]}

YOUNG, L ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA,ELECT ENGN DEPT,VANCOUVER 8,BRITISH COLUMBI,CANADA

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 01期

关键词：

D O I：

10.1016/0038-1101(74)90110-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：31 / 34

页数：4

共 50 条

[21] CHARGE-STORAGE JUNCTION FIELD-EFFECT TRANSISTOR
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