GAAS MESFET, A LOW-NOISE MICROWAVE TRANSISTOR

被引：0

作者：

KNIEPKAMP, H ^{[1
]}

机构：

[1] SIEMENS AG,CENT RES & DEV,D-8000 MUNICH 70,FED REP GER

来源：

SIEMENS REVIEW | 1977年 / 44卷 / 09期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：412 / 417

页数：6

共 50 条

[1] LOW-NOISE MICROWAVE GAAS FIELD-EFFECT TRANSISTOR
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