OXYGEN STABILIZATION OF MOLECULAR-BEAM EPITAXIAL AL-GAAS SCHOTTKY-BARRIER HEIGHTS

被引：9

作者：

OKAMOTO, K ^{[1
]}

WOOD, CEC ^{[1
]}

RATHBUN, L ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 06期

关键词：

D O I：

10.1063/1.331194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4521 / 4523

页数：3

共 50 条

[1] SCHOTTKY-BARRIER HEIGHTS OF MOLECULAR-BEAM EPITAXIAL METAL-ALGAAS STRUCTURES
OKAMOTO, K
WOOD, CEC
EASTMAN, LF
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 636 - 638
[2] AL-GAAS (001) SCHOTTKY-BARRIER FORMATION
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ANDERSSON, TG
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4474 - 4481
[3] THERMAL-STABILITY OF EPITAXIAL AL-GAAS SCHOTTKY BARRIERS PREPARED BY MOLECULAR-BEAM EPITAXY
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SINGER, KE
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) : 3189 - 3195
[4] STABILIZATION OF SCHOTTKY-BARRIER PROPERTIES OF SINGLE-CRYSTAL AL/GAAS AND AL/ALGAAS/GAAS CONTACTS PREPARED BY MOLECULAR-BEAM EPITAXY
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[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 311 - 316
[5] ENGINEERED AL - GAAS SCHOTTKY-BARRIER HEIGHTS BY MBE
EGLASH, SJ
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1690 - 1691
[6] RICHARDSON CONSTANT OF AL-GAAS AND AU-GAAS SCHOTTKY-BARRIER DIODES
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ASHOK, S
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (03) : 169 - 172
[7] THE DEPENDENCE OF AL SCHOTTKY-BARRIER HEIGHT ON SURFACE CONDITIONS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY
WANG, WI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 574 - 580
[8] EPITAXIAL SILICIDE INTERFACES AND SCHOTTKY-BARRIER HEIGHTS
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SCHREY, F
LEVI, AFJ
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 41 - 41
[9] VARIATION OF THE SCHOTTKY-BARRIER HEIGHT OF THE DIFFERENTLY ORIENTED COGA ON GAAS BY MOLECULAR-BEAM EPITAXY
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ARGHAVANI, R
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (24) : 2869 - 2871
[10] INITIAL-STAGES OF THE SCHOTTKY-BARRIER FORMATION FOR AN ABRUPT AL-GAAS(100) INTERFACE
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[J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2389 - 2393

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