ENGINEERED AL - GAAS SCHOTTKY-BARRIER HEIGHTS BY MBE

被引：3
|
作者：
EGLASH, SJ
PAN, S
SPICER, WE
COLLINS, DM
机构：
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
[2] HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 10期
关键词：
D O I：
10.1109/T-ED.1982.20981
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1690 / 1691
页数：2
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