THE DEPENDENCE OF AL SCHOTTKY-BARRIER HEIGHT ON SURFACE CONDITIONS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：73

作者：

WANG, WI ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582601

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：574 / 580

页数：7

共 50 条

[1] VARIATION OF THE SCHOTTKY-BARRIER HEIGHT OF THE DIFFERENTLY ORIENTED COGA ON GAAS BY MOLECULAR-BEAM EPITAXY
KUO, TC
WANG, KL
ARGHAVANI, R
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (24) : 2869 - 2871
[2] CONTROL OF GAAS SCHOTTKY-BARRIER HEIGHT BY ULTRATHIN MOLECULAR-BEAM EPITAXY SI INTERFACE CONTROL LAYER
KOYANAGI, K
KASAI, S
HASEGAWA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B): : 502 - 510
[3] DEPENDENCE OF APPARENT BARRIER HEIGHT ON BARRIER THICKNESS FOR PERPENDICULAR TRANSPORT IN ALAS/GAAS SINGLE-BARRIER STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
KYONO, CS
KESAN, VP
NEIKIRK, DP
MAZIAR, CM
STREETMAN, BG
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (06) : 549 - 551
[4] CONTROL OF GAAS SCHOTTKY-BARRIER HEIGHT USING A THIN NONSTOICHIOMETRIC GAAS INTERFACE LAYER GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
FUJIEDA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (12) : 7357 - 7363
[5] CONTROL OF GAAS SCHOTTKY-BARRIER HEIGHT BY FORMATION OF A THIN OFF-STOICHIOMETRIC GAAS INTERLAYER GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
FUJIEDA, S
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (03) : 288 - 290
[6] STABILIZATION OF SCHOTTKY-BARRIER PROPERTIES OF SINGLE-CRYSTAL AL/GAAS AND AL/ALGAAS/GAAS CONTACTS PREPARED BY MOLECULAR-BEAM EPITAXY
SUN, DC
SAKAKI, H
OHNO, H
SEKIGUCHI, Y
TANOUE, T
[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 311 - 316
[7] OXYGEN STABILIZATION OF MOLECULAR-BEAM EPITAXIAL AL-GAAS SCHOTTKY-BARRIER HEIGHTS
OKAMOTO, K
WOOD, CEC
RATHBUN, L
EASTMAN, LF
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4521 - 4523
[8] SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY
CHANG, LL
SEGMULLER, A
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 39 - 41
[9] BARRIER HEIGHT ENHANCEMENT OF INP-BASED N-GA0.47IN0.53AS SCHOTTKY-BARRIER DIODES GROWN BY MOLECULAR-BEAM EPITAXY
KIM, JH
LI, SS
FIGUEROA, L
[J]. ELECTRONICS LETTERS, 1988, 24 (11) : 687 - 689
[10] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS
CHO, AY
DERNIER, PD
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3328 - 3332

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