THE DEPENDENCE OF AL SCHOTTKY-BARRIER HEIGHT ON SURFACE CONDITIONS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：73

作者：

WANG, WI ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582601

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：574 / 580

页数：7

共 50 条

[41] HEAVILY SI-DOPED GAAS AND ALAS/N-GAAS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
OGAWA, M
BABA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L572 - L574
[42] CAPACITIVE HYSTERESIS EFFECTS IN 5.0 NM SINGLE AND DOUBLE BARRIER ALAS/GAAS TUNNELING STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
CAMPBELL, AC
KESAN, VP
CROOK, GE
MAZIAR, CM
NEIKIRK, DP
STREETMAN, BG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 651 - 656
[43] CONTROL OF AL/GAAS SCHOTTKY-BARRIER HEIGHT BY HIGH CE DOPING
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FOXMAN, E
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (23) : 2347 - 2348
[44] DEEP STATES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
BLOOD, P
HARRIS, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 993 - 1007
[45] GAAS/GAALAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY
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SCHLAPP, W
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C99 - C99
[46] SILICON AUTOCOMPENSATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
BALLINGALL, JM
MORRIS, BJ
LEOPOLD, DJ
RODE, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3571 - 3573
[47] SELENIUM DOPING IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
SANO, ET
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (10): : 5636 - 5639
[48] PROPERTIES OF GAAS ON SI GROWN BY MOLECULAR-BEAM EPITAXY
HOUDRE, R
MORKOC, H
[J]. CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1990, 16 (02) : 91 - 114
[49] MOLECULAR-BEAM EPITAXY GROWN AL(GA)INAS - SCHOTTKY CONTACTS AND DEEP LEVELS
SCHRAMM, C
BACH, HG
KUNZEL, H
PRASEUTH, JP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (09) : 2808 - 2811
[50] STUDIES OF AU-GAAS (001) INTERFACES PREPARED BY MOLECULAR-BEAM EPITAXY .1. OVERLAYER GROWTH AND SCHOTTKY-BARRIER FORMATION
KOBAYASHI, KLI
WATANABE, N
NARUSAWA, T
NAKASHIMA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) : 3758 - 3765

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