OXYGEN STABILIZATION OF MOLECULAR-BEAM EPITAXIAL AL-GAAS SCHOTTKY-BARRIER HEIGHTS

被引:9
|
作者
OKAMOTO, K [1 ]
WOOD, CEC [1 ]
RATHBUN, L [1 ]
EASTMAN, LF [1 ]
机构
[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
关键词
D O I
10.1063/1.331194
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4521 / 4523
页数:3
相关论文
共 50 条
  • [31] HIGH-PERFORMANCE PLANAR GAAS AL0.3 GA0.7AS SCHOTTKY-BARRIER PHOTODETECTOR GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    TZENG, YC
    LI, SS
    PENG, CK
    KAO, YC
    [J]. ELECTRONICS LETTERS, 1991, 27 (25) : 2379 - 2381
  • [32] THERMAL-STABILITY IN AL/TI/GAAS SCHOTTKY-BARRIER
    HARA, T
    ZHU, JY
    MOCHIZUKI, A
    ASAI, S
    HIGASHISAKA, A
    KOHZU, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (7A): : L800 - L802
  • [33] MOLECULAR-BEAM EPITAXIAL GAAS LAYERS FOR MESFETS
    WOOD, CEC
    [J]. APPLIED PHYSICS LETTERS, 1976, 29 (11) : 746 - 748
  • [34] ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS
    SMITH, RS
    MULLER, HD
    ENNEN, H
    WENNEKERS, P
    MAIER, M
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 49 - 51
  • [35] CONTROL OF GAAS SCHOTTKY-BARRIER HEIGHT BY FORMATION OF A THIN OFF-STOICHIOMETRIC GAAS INTERLAYER GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
    FUJIEDA, S
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (03) : 288 - 290
  • [36] STUDIES OF AU-GAAS (001) INTERFACES PREPARED BY MOLECULAR-BEAM EPITAXY .1. OVERLAYER GROWTH AND SCHOTTKY-BARRIER FORMATION
    KOBAYASHI, KLI
    WATANABE, N
    NARUSAWA, T
    NAKASHIMA, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) : 3758 - 3765
  • [37] DESIGN OF EPITAXIAL METAL/ALAS/GAAS STRUCTURES FOR ENHANCEMENT OF THE SCHOTTKY-BARRIER HEIGHT
    CHEEKS, TL
    SANDS, T
    NAHORY, RE
    HARBISON, JP
    GILCHRIST, HL
    KERAMIDAS, VG
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (10) : 881 - 884
  • [38] SCHOTTKY-BARRIER HEIGHTS AND INTERFACE CHEMISTRY IN AG, IN, AND AL OVERLAYERS ON GAP(110)
    ALONSO, M
    CIMINO, R
    MAIERHOFER, C
    CHASSE, T
    BRAUN, W
    HORN, K
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 955 - 963
  • [39] CONTROL OF AL/GAAS SCHOTTKY-BARRIER HEIGHT BY HIGH CE DOPING
    HIROSE, K
    FOXMAN, E
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (23) : 2347 - 2348
  • [40] EARLY STAGES OF SCHOTTKY-BARRIER FORMATION FOR AL DEPOSITED ON GAAS(110)
    ORTEGA, J
    GARCIAVIDAL, FJ
    PEREZ, R
    RINCON, R
    FLORES, F
    COLUZZA, C
    GOZZO, F
    MARGARITONDO, G
    HWU, Y
    LOZZI, L
    LAROSA, S
    [J]. PHYSICAL REVIEW B, 1992, 46 (16): : 10277 - 10283