EPITAXIAL SILICIDE INTERFACES AND SCHOTTKY-BARRIER HEIGHTS

被引：0
|
作者：
TUNG, RT [1 ]
SCHREY, F [1 ]
LEVI, AFJ [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：41 / 41
页数：1
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