NATURE OF RADIATION-INDUCED POINT-DEFECTS IN AMORPHOUS SIO2 AND THEIR ROLE IN SIO2-ON-SI STRUCTURES

被引：0

作者：

GRISCOM, DL ^{[1
]}

BROWN, DB ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C137 / C137

页数：1

共 50 条

[31] Paramagnetic point defects at SiO2/nanocrystalline Si interfaces
Stesmans, A.
Jivanescu, M.
Godefroo, S.
Zacharias, M.
APPLIED PHYSICS LETTERS, 2008, 93 (02)
[32] DEPENDENCE OF RADIATION-INDUCED INTERFACE TRAPS ON GATE AL THICKNESS IN METAL SIO2/SI STRUCTURES
ZEKERIYA, V
MA, TP
JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1017 - 1020
[33] CRYSTALLIZATION KINETICS OF AMORPHOUS SI/SIO2 SUPERLATTICE STRUCTURES
PERSANS, PD
RUPPERT, A
ABELES, B
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1988, 102 (1-3) : 130 - 135
[34] Thermally induced Si(100)/SiO2 interface degradation in poly-Si/SiO2/Si structures
Afanas'ev, VV
Stesmans, A
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (05) : G279 - G282
[35] RADIATION-INDUCED PROPERTY CHANGES IN CRISTOBALITE (SIO2)
SCHENK, M
PHYSICA STATUS SOLIDI, 1969, 36 (02): : K101 - &
[36] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES
MCLEAN, FB
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1651 - 1657
[37] RADIATION-INDUCED E'' CENTERS IN CRYSTALLINE SIO2
BOSSOLI, RB
JANI, MG
HALLIBURTON, LE
SOLID STATE COMMUNICATIONS, 1982, 44 (02) : 213 - 217
[38] TOWARD A MODEL OF RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES
MCLEAN, FB
BOESCH, HE
WINOKUR, PS
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 219 - 219
[39] Radiation-induced segregation of metals at moving SiO2-amorphous Si interfaces
Williams, JS
Petravic, M
Conway, M
Short, KT
MICROSTRUCTURE EVOLUTION DURING IRRADIATION, 1997, 439 : 575 - 580
[40] SI/SIO2 INTERFACE STRUCTURES IN LASER-RECRYSTALLIZED SI ON SIO2
OGURA, A
AIZAKI, N
APPLIED PHYSICS LETTERS, 1989, 55 (06) : 547 - 549

← 1 2 3 4 5 →