Thermally induced Si(100)/SiO2 interface degradation in poly-Si/SiO2/Si structures

被引：4

作者：

Afanas'ev, VV ^{[1
]}

Stesmans, A ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Dept Phys, B-3001 Louvain, Belgium

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2001年 / 148卷 / 05期

关键词：

D O I：

10.1149/1.1362553

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thermal treatment of poly-Si/SiO2/Si(100) structures at temperatures above 850 degreesC is found to generate Si(100)/SiO2 interface states related to P-b0 centers, which are not generated in the samples subjected to annealing without the poly-Si layer on. Generation of P-b0 centers indicates that during the anneal hydrogen is released from the poly-Si/oxide stack. This H release may be related to the growth of poly-Si grains and/or to the chemical interaction between the poly-Si and SiO2. (C) 2001 The Electrochemical Society.

引用

页码：G279 / G282

页数：4

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