NATURE OF RADIATION-INDUCED POINT-DEFECTS IN AMORPHOUS SIO2 AND THEIR ROLE IN SIO2-ON-SI STRUCTURES

被引：0
|
作者：
GRISCOM, DL [1 ]
BROWN, DB [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C137 / C137
页数：1
相关论文
共 50 条
  • [21] RADIATION-INDUCED INTERFACE TRAPS IN MO/SIO2/SI CAPACITORS
    NISHIOKA, Y
    DASILVA, EF
    MA, TP
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1166 - 1171
  • [22] Alfa-particle irradiation induced defects in SiO2 films of Si-SiO2 structures
    Koman, BP
    Galchynskyy, OV
    Kovalyuk, RO
    Shkolnyy, AK
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 116 (1-4): : 389 - 392
  • [23] Photoluminescence from SiO2/Si/SiO2 structures
    Photopoulos, P
    Nassiopoulou, AG
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (21) : 3641 - 3650
  • [24] Sn+-implantation and radiation-induced structural modifications in amorphous SiO2
    Angermann, T
    Dunken, HH
    BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1996, 100 (09): : 1535 - 1538
  • [25] PARAMAGNETIC POINT-DEFECTS IN AMORPHOUS THIN-FILMS OF SIO2 AND SI3N4 - UPDATES AND ADDITIONS
    POINDEXTER, EH
    WARREN, WL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (07) : 2508 - 2516
  • [26] ION IMPLANTATION-INDUCED AND RADIATION-INDUCED STRUCTURAL MODIFICATIONS IN AMORPHOUS SIO2
    DEVINE, RAB
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 152 (01) : 50 - 58
  • [27] DEFECTS AT THE SI/SIO2 INTERFACE OF SIO2 PRECIPITATES IN SILICON
    HOBBS, A
    BARKLIE, RC
    REESON, K
    HEMMENT, PLF
    ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE, 1987, 151 : 251 - 257
  • [28] Role of defects in Si/SiO2 quantum wells
    Degoli, E
    Ossicini, S
    OPTICAL MATERIALS, 2001, 17 (1-2) : 95 - 98
  • [29] Simulation of Radiation Effects in SiO2/Si Structures
    Komarov, F. F.
    Zayats, G. M.
    Komarov, A. F.
    Miskiewicz, S. A.
    Michailov, V. V.
    Komsta, H.
    ACTA PHYSICA POLONICA A, 2015, 128 (05) : 857 - 860
  • [30] Defects induced by hydrogen implantation in n-Si/SiO2 structures
    Simeonov, S
    Gushterov, A
    Szekeres, A
    Kafedjiiska, E
    VACUUM, 2004, 76 (2-3) : 303 - 306
12345