NATURE OF RADIATION-INDUCED POINT-DEFECTS IN AMORPHOUS SIO2 AND THEIR ROLE IN SIO2-ON-SI STRUCTURES

被引：0
|
作者：
GRISCOM, DL [1 ]
BROWN, DB [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 03期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C137 / C137
页数：1
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