NATURE OF RADIATION-INDUCED POINT-DEFECTS IN AMORPHOUS SIO2 AND THEIR ROLE IN SIO2-ON-SI STRUCTURES

被引：0

作者：

GRISCOM, DL ^{[1
]}

BROWN, DB ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 03期

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中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：C137 / C137

页数：1

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