COMPENSATION EFFECTS IN SI-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：12
|
作者：
NOTTENBURG, R
BUHLMANN, HJ
FREI, M
ILEGEMS, M
机构：
来源：
APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 01期
关键词：
D O I：
10.1063/1.94556
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：71 / 73
页数：3
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