Effect of As overpressure on Si-doped (111)A, (211)A and (311)A GaAs grown by molecular beam epitaxy

被引：16
|
作者：
Johnston, D [1 ]
Pavesi, L [1 ]
Henini, M [1 ]
机构：
[1] UNIV TRENT,DIPARTIMENTO FIS,I-38050 TRENT,ITALY
来源：
MICROELECTRONICS JOURNAL | 1995年 / 26卷 / 08期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1016/0026-2692(95)00034-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Si-doped (111)A, (211)A and (311)A GaAs samples grown by molecular beam epitaxy (MBE) at different As over-pressures have been studied. Hall effect measurements have revealed that the doping changes from p- to n-type when the As pressure is increased. The transition As pressure is lower for the (211)A than for the (311)A surfaces. Photoluminescence measurements have shown that, when the As pressure is increased, arsenic vacancy defects are changed into pairs of Ga vacancy and Ga antisite defects. These results are explained by considering the orientation dependence of the surface bonding and the kinetics of the MBE growth process.
引用
收藏
页码：759 / 765
页数：7
相关论文
共 50 条
  • [1] INFLUENCE OF THE AS OVERPRESSURE DURING THE MOLECULAR-BEAM EPITAXY GROWTH OF SI-DOPED (211)A AND (311)A GAAS
    PAVESI, L
    HENINI, M
    JOHNSTON, D
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (21) : 2846 - 2848
  • [2] EFFECT OF AS OVERPRESSURE ON SI-DOPED (111) A GAAS GROWN BY MOLECULAR-BEAM EPITAXY - A PHOTOLUMINESCENCE STUDY
    PIAZZA, F
    PAVESI, L
    HENINI, M
    JOHNSTON, D
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (12) : 1504 - 1507
  • [3] Photoluminescence investigation of p-type Si-doped AlGaAs grown by molecular beam epitaxy on (111)A, (211)A and (311)A GaAs surfaces
    Henini, M
    Galbiati, N
    Grilli, E
    Guzzi, M
    Pavesi, L
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 1108 - 1113
  • [4] ELECTRICAL-PROPERTIES OF HEAVILY SI-DOPED (311)A GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    AGAWA, K
    HIRAKAWA, K
    SAKAMOTO, N
    HASHIMOTO, Y
    IKOMA, T
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (09) : 1171 - 1173
  • [5] CONDUCTION-TYPE CONVERSION IN SI-DOPED (311)A GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    SAKAMOTO, N
    HIRAKAWA, K
    IKOMA, T
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (10) : 1444 - 1446
  • [6] ELECTRICAL-PROPERTIES OF HEAVILY SI-DOPED GAAS GROWN ON (311)A GAAS-SURFACES BY MOLECULAR-BEAM EPITAXY
    AGAWA, K
    HASHIMOTO, Y
    HIRAKAWA, K
    IKOMA, T
    [J]. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 547 - 552
  • [7] COMPENSATION EFFECTS IN SI-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    NOTTENBURG, R
    BUHLMANN, HJ
    FREI, M
    ILEGEMS, M
    [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 71 - 73
  • [8] EFFECTS OF THERMAL ANNEALING ON SI-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    SHINOZAKI, K
    MANNOH, M
    NOMURA, Y
    MIHARA, M
    ISHII, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4826 - 4827
  • [9] Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy
    Zhang, DH
    Wang, XZ
    Zheng, HQ
    Yoon, SF
    Kam, CH
    [J]. ADVANCED MICROELECTRONIC PROCESSING TECHNIQUES, 2000, 4227 : 14 - 19
  • [10] Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy
    Shinohara, K
    Motokawa, T
    Kasahara, K
    Shimomura, S
    Sano, N
    Adachi, A
    Hiyamizu, S
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (01) : 125 - 128
12345