ELECTRICAL-PROPERTIES OF HEAVILY SI-DOPED GAAS GROWN ON (311)A GAAS-SURFACES BY MOLECULAR-BEAM EPITAXY

被引：0
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作者：
AGAWA, K
HASHIMOTO, Y
HIRAKAWA, K
IKOMA, T
机构：
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have systematically studied the doping characteristics of Si into GaAs grown on the (311)A GaAs substrates by molecular beam epitaxy in order to realize highly conductive p-type GaAs layers. The highest hole density obtained for the uniformly doped layers was 4.2x10(19) cm(-3), while for the delta-doped layers the sheet hole density as high as 2.6x10(13) cm(-2) was achieved. Furthermore, the growth temperature dependence of Si doping has been investigated. It is found that the conduction-type sharply changes from p-type to n-type with decreasing growth temperature at a critical temperature of 430 - 480 degrees C.
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页码：547 / 552
页数：6
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