Structural and doping properties of molecular beam epitaxy-grown Si-doped GaAs(001) surfaces

被引：1
|
作者：
Gwo, S [1 ]
Ohno, H [1 ]
Miwa, S [1 ]
Fan, JF [1 ]
Tokumoto, H [1 ]
机构：
[1] JOINT RES CTR ATOM TECHNOL, NATL INST ADV INTERDISCIPLINARY RES, TSUKUBA, IBARAKI 305, JAPAN
来源：
SURFACE SCIENCE | 1996年 / 357卷 / 1-3期
关键词：
epitaxy; gallium arsenide; low index single crystal surfaces; molecular beam epitaxy; scanning tunneling microscopy; semiconducting surfaces; single crystal epitaxy; surface relaxation and reconstruction; surface structure; morphology; roughness; and topography;
D O I：
10.1016/0039-6028(96)00197-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Scanning funneling microscopy was used to study surface structures and doping properties of molecular beam epitaxy (MBE)-grown Si-doped. GaAs(001)-(2 x 4) and GaAs(001)-c(4 x 4) surfaces on the atomic scale. It was found that on the Si-doped (2 x 4) surface, arsenic dimers formed severer energetically different configurations besides the most stable two-dimer configuration. The doping properties of the c(4 x 4) surface vr ere found to be significantly different from the (2 x 4) case. The Si dopants tended to segregate on top of the c(4 x 4) surface and formed small asymmetric clusters oriented along the [110] direction.
引用
收藏
页码：446 / 450
页数：5
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