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- [1] KINETICS AND MECHANISM OF THE ELECTROCHEMICAL FORMATION OF POROUS SURFACE LAYERS ON SILICON IN HYDROFLUORIC ACID. SPECIFIC KINETIC FEATURES OF POROUS-LAYER FORMATION ON n- AND p-TYPE SILICON.1600, (22):Izidinov, S.O.Blokhina, A.P.Martynova, T.S.
- [2] KINETICS AND MECHANISM OF ELECTROCHEMICAL FORMATION OF POROUS SURFACE-LAYERS ON SILICON IN HYDROFLUORIC-ACID - INFLUENCE OF ILLUMINATION ON THE KINETICS AND MECHANISM OF ANODIC POROUS-LAYER FORMATION ON NORMAL-TYPE SILICONSOVIET ELECTROCHEMISTRY, 1987, 23 (01): : 66 - 70IZIDINOV, SOBLOKHINA, APMARTYNOVA, TS
- [3] KINETICS AND MECHANISM OF THE ELECTROCHEMICAL FORMATION OF THE POROUS SURFACE-LAYER ON SILICON IN HYDROFLUORIC-ACID - FEATURES OF THE ELECTROCHEMICAL-BEHAVIOR OF N-TYPE AND P-TYPE SILICON UNDER CONDITIONS FOR THE FORMATION OF A POROUS LAYERSOVIET ELECTROCHEMISTRY, 1985, 21 (09): : 1099 - 1106IZIDINOV, SOBLOKHINA, APMARTYNOVA, TS
- [4] KINETICS AND MECHANISM OF THE ELECTROCHEMICAL FORMATION OF POROUS SURFACE-LAYERS ON SILICON IN HYDROFLUORIC-ACID - KINETIC FEATURES OF POROUS-LAYER GROWTH AND OF THE ANODIC-DISSOLUTION OF NORMAL-TYPE SILICON UNDER GALVANOSTATIC POLARIZATIONSOVIET ELECTROCHEMISTRY, 1986, 22 (01): : 12 - 18IZIDINOV, SOBLOKHINA, APMARTYNOVA, TS
- [5] THE KINETICS AND MECHANISM OF THE ELECTROCHEMICAL FORMATION OF POROUS SURFACE-LAYERS ON SILICON IN HYDROFLUORIC-ACID - PHOTOELECTROCHEMICAL BEHAVIOR OF NORMAL-TYPE SILICON DURING ANODIC FORMATION OF THE POROUS LAYERSSOVIET ELECTROCHEMISTRY, 1986, 22 (03): : 313 - 319IZIDINOV, SOBLOKHINA, APMARTYNOVA, TS
- [6] KINETICS AND MECHANISM OF THE ELECTROCHEMICAL FORMATION OF POROUS SURFACE LAYERS ON SILICON IN HYDROFLUORIC ACID. PHOTOELECTROCHEMICAL BEHAVIOR OF n-TYPE SILICON DURING ANODIC FORMATION OF THE POROUS LAYERS.Soviet electrochemistry, 1986, 23 (03): : 313 - 319Izidinov, S.O.Blokhina, A.P.Martynova, T.S.
- [7] EFFECT OF HYDROFLUORIC-ACID CONCENTRATION ON THE STRUCTURE AND KINETICS OF ELECTROCHEMICAL FORMATION OF THE POROUS LAYER ON N-TYPE SILICON UNDER STEADY ILLUMINATIONSOVIET ELECTROCHEMISTRY, 1987, 23 (11): : 1445 - 1452IZIDINOV, SOBLOKHINA, APISMAILOVA, LA
- [8] ANOMALOUSLY HIGH PHOTOVOLTAIC ACTIVITY OF POLISHED N-TYPE SILICON DURING ANODIC POROUS-LAYER FORMATION IN HYDROFLUORIC-ACID SOLUTIONSSOVIET ELECTROCHEMISTRY, 1987, 23 (11): : 1452 - 1457IZIDINOV, SOBLOKHINA, APISMAILOVA, LA
- [9] ROLE OF THE SURFACE CONDITION IN THE MECHANISM OF MACROPORE NUCLEATION AND GROWTH DURING ELECTROCHEMICAL FORMATION OF THE POROUS LAYER ON N-TYPE SILICON IN CONCENTRATED HYDROFLUORIC-ACID IN THE DARKSOVIET ELECTROCHEMISTRY, 1987, 23 (12): : 1499 - 1505IZIDINOV, SOBLOKHINA, APISMAILOVA, LA
- [10] Effect of hydrofluoric acid concentration on the structure and kinetics of electrochemical formation of the porous layer on n-type silicon under steady illuminationSoviet electrochemistry, 1988, 23 (11): : 1445 - 1452Izidinov, S.O.Blokhina, A.P.Ismailova, L.A.