KINETICS AND MECHANISM OF THE ELECTROCHEMICAL FORMATION OF POROUS SURFACE LAYERS ON SILICON IN HYDROFLUORIC ACID. SPECIFIC KINETIC FEATURES OF POROUS-LAYER FORMATION ON n- AND p-TYPE SILICON.

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作者：

Izidinov, S.O.

Blokhina, A.P.

Martynova, T.S.

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| 1600年 / 22期

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摘要：

SEMICONDUCTING SILICON

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[1] KINETICS AND MECHANISM OF THE ELECTROCHEMICAL FORMATION OF POROUS SURFACE-LAYERS ON SILICON IN HYDROFLUORIC-ACID - SPECIFIC KINETIC FEATURES OF POROUS-LAYER FORMATION ON N-TYPE AND P-TYPE SILICON
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