Effect of hydrofluoric acid concentration on the structure and kinetics of electrochemical formation of the porous layer on n-type silicon under steady illumination

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作者：
Izidinov, S.O. [1 ]
Blokhina, A.P. [1 ]
Ismailova, L.A. [1 ]
机构：
[1] V.I. Lenin All-Union, Electrotechnical Inst, Russia
来源：
Soviet electrochemistry | 1988年 / 23卷 / 11期
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摘要：
16
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页码：1445 / 1452
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