KINETICS AND MECHANISM OF THE ELECTROCHEMICAL FORMATION OF POROUS SURFACE-LAYERS ON SILICON IN HYDROFLUORIC-ACID - SPECIFIC KINETIC FEATURES OF POROUS-LAYER FORMATION ON N-TYPE AND P-TYPE SILICON

被引：0
|
作者：
IZIDINOV, SO
BLOKHINA, AP
MARTYNOVA, TS
机构：
来源：
SOVIET ELECTROCHEMISTRY | 1986年 / 22卷 / 12期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1494 / 1500
页数：7
相关论文
共 50 条
  • [21] P-TYPE AND N-TYPE SILICON AND THE FORMATION OF THE PHOTOVOLTAIC BARRIER IN SILICON INGOTS
    SCAFF, JH
    THEUERER, HC
    SCHUMACHER, EE
    TRANSACTIONS OF THE AMERICAN INSTITUTE OF MINING AND METALLURGICAL ENGINEERS, 1949, 185 (06): : 383 - 388
  • [22] The structure and optical properties of n-type and p-type porous silicon
    Hong, KP
    Lee, CM
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S671 - S675
  • [23] POSITRON LIFETIME SPECTROSCOPY OF N-TYPE AND P-TYPE POROUS SILICON
    DANNEFAER, S
    BRETAGNON, T
    FOUCARAN, A
    TALIERCIO, T
    KERR, D
    THIN SOLID FILMS, 1995, 255 (1-2) : 171 - 173
  • [24] P-TYPE AND N-TYPE SILICON AND THE FORMATION OF THE PHOTOVOLTAIC BARRIER IN SILICON INGOTS - DISCUSSION
    ELLIS, WC
    SCAFF, JH
    ROBERTSON, WD
    STAUSS, HE
    BLOOM, MC
    TRANSACTIONS OF THE AMERICAN INSTITUTE OF MINING AND METALLURGICAL ENGINEERS, 1950, 188 (08): : 1027 - 1027
  • [25] ROLE OF LIGHT IN THE FORMATION OF POROUS SILICON ON P-TYPE SUBSTRATES
    BELYAKOV, LV
    GORYACHEV, DN
    SRESELI, OM
    YAROSHETSKII, ID
    SEMICONDUCTORS, 1993, 27 (11-12) : 1078 - 1080
  • [26] Effect of Dopant Concentration on the Pore Formation of Porous Silicon on N-Type Silicon
    Nadia, Siti
    Ali, Nihad K.
    Ahmad, Mohd Ridzuan
    Haidary, Sazan M.
    2014 IEEE 5TH INTERNATIONAL CONFERENCE ON PHOTONICS (ICP), 2014, : 53 - 55
  • [27] Effects of Electrochemical Etching Conditions on the Formation and Photoluminescence Properties of P-Type Porous Silicon
    Lu, Le
    Li, Wenbing
    Zhang, Liqiang
    Ge, Daohan
    5TH ANNUAL INTERNATIONAL CONFERENCE ON MATERIAL ENGINEERING AND APPLICATION (ICMEA 2018), 2019, 484
  • [28] CHARGE-EXCHANGE MECHANISM RESPONSIBLE FOR P-TYPE SILICON DISSOLUTION DURING POROUS SILICON FORMATION
    GASPARD, F
    BSIESY, A
    LIGEON, M
    MULLER, F
    HERINO, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (10) : 3043 - 3046
  • [29] Effect of etching time in hydrofluoric acid on the structure and morphology of n-type porous silicon
    Kopani, Martin
    Mikula, Milan
    Kosnac, Daniel
    Kovac, Jaroslav
    Trnka, Michal
    Gregus, Jan
    Jerigova, Monika
    Jergel, Matej
    Vavrinsky, Erik
    Bacova, Silvia
    Zitto, Peter
    Polak, Stefan
    Pincik, Emil
    APPLIED SURFACE SCIENCE, 2020, 532 (532)
  • [30] APPLICATION OF POROUS SILICON FORMATION SELECTIVITY TO IMPURITY PROFILING IN P-TYPE SILICON SUBSTRATES
    LIGEON, M
    MULLER, F
    HERINO, R
    GASPARD, F
    HALIMAOUI, A
    BOMCHIL, G
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (08) : 3814 - 3819
12345