P-TYPE AND N-TYPE SILICON AND THE FORMATION OF THE PHOTOVOLTAIC BARRIER IN SILICON INGOTS

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作者：
SCAFF, JH
THEUERER, HC
SCHUMACHER, EE
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来源：
TRANSACTIONS OF THE AMERICAN INSTITUTE OF MINING AND METALLURGICAL ENGINEERS | 1949年 / 185卷 / 06期
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TU [建筑科学];
学科分类号：
0813 ;
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页码：383 / 388
页数：6
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