THERMALLY INDUCED DEFECTS IN N-TYPE AND P-TYPE SILICON

被引：44
|
作者：
LESKOSCHEK, W [1 ]
FEICHTINGER, H [1 ]
VIDRICH, G [1 ]
机构：
[1] UNIV GRAZ, PHYS INST, GRAZ, AUSTRIA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1973年 / 20卷 / 02期
关键词：
D O I：
10.1002/pssa.2210200222
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：601 / 610
页数：10
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