共 50 条
- [11] Anomalously high photovoltaic activity of polished n-type silicon during anodic porous layer formation in hydrofluoric-acid solutions Soviet electrochemistry, 1988, 23 (11): : 1452 - 1457
- [12] Formation of Porous Silicon: Mechanism of Macropores Formation in n-Type Si SAINS MALAYSIANA, 2013, 42 (05): : 643 - 648
- [16] ANODIC FORMATION OF POROUS LAYERS WITH A GIVEN STRUCTURE ON N-TYPE SILICON JOURNAL OF APPLIED CHEMISTRY OF THE USSR, 1992, 65 (05): : 875 - 879
- [17] CHANGES IN THE KINETICS AND MECHANISM OF THE BASIC OXIDATION REACTION OCCURRING UNDER THE ACTION OF LIGHT AT N-TYPE SILICON DURING ANODIC POROUS-LAYER FORMATION SOVIET ELECTROCHEMISTRY, 1992, 28 (09): : 1085 - 1090
- [18] INFLUENCE OF ANODIC POLARIZATION CONDITIONS UNDER STEADY ILLUMINATION ON THE FORMATION AND PROPERTIES OF POROUS SURFACE-LAYERS ON N-TYPE SILICON SOVIET ELECTROCHEMISTRY, 1986, 22 (08): : 986 - 992
- [19] Controllable formation of porous structures on n-type silicon PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1997, 5-6 : 47 - 52
- [20] P-TYPE AND N-TYPE SILICON AND THE FORMATION OF THE PHOTOVOLTAIC BARRIER IN SILICON INGOTS JOURNAL OF METALS, 1950, 2 (08): : 1027 - 1027