EXCESS NOISE IN SELECTED FIELD-EFFECT TRANSISTORS

被引：12
|
作者：
LLACER, J [1 ]
MEIER, DF [1 ]
机构：
[1] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB, DEPT ELECTR ENGN, BERKELEY, CA 94720 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1977年 / 24卷 / 01期
关键词：
D O I：
10.1109/TNS.1977.4328696
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：317 / 326
页数：10
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