EXCESS NOISE IN SELECTED FIELD-EFFECT TRANSISTORS

被引：12

作者：

LLACER, J ^{[1
]}

MEIER, DF ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB, DEPT ELECTR ENGN, BERKELEY, CA 94720 USA

来源：

关键词：

D O I：

10.1109/TNS.1977.4328696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：317 / 326

页数：10

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