Random Telegraph Noise Model of Tunnel Field-Effect Transistors

被引：1

作者：

Lee, Jang Woo ^{[1
]}

Choi, Woo Young ^{[1
]}

机构：

[1] Sogang Univ, Dept Elect Engn, 35 Baekbeom Ro, Seoul 121742, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 10期

关键词：

Energy Band Modulation; Mobility Fluctuation; Number Fluctuation; Random Telegraph Noise; Tunnel Field-Effect Transistors; GEOMETRY;

D O I：

10.1166/jnn.2016.13140

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The random telegraph noise (RTN) of tunnel field-effect transistors (TFETs) has been investigated. It has been observed that the RTN of TFETs arises from the tunnel carriers trapped and detrapped by oxide traps around the tunnel region. In addition, the trapped tunnel charge carriers modulate the tunnel energy band, which in turn causes tunnel currents to modulate. It is different than the RTN of MOSFETs which is affected by both number and correlated mobility fluctuations of channel inversion carriers.

引用

页码：10264 / 10267

页数：4

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