TUNNEL FIELD-EFFECT TRANSISTORS - UPDATE

被引：0
|
作者：
Seabaugh, Alan [1 ]
Lu, Hao [1 ]
机构：
[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
关键词：
INTERFACE TRAPS; INAS; GRAPHENE; FETS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Progress in the development of tunnel field-effect transistors (TFETs) is updated. Selected experimental demonstrations and simulations of sub-60-mV/decade TFETs are compared. A universal SPICE model is discussed which allows the unique attributes of the TFET to be represented across material systems and gate geometries to enable circuit design, with the intent of better informing the device development.
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页数：4
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