Tunnel field-effect transistors with graphene channels

被引：27

作者：

Svintsov, D. A. ^{[1
]}

Vyurkov, V. V. ^{[1
]}

Lukichev, V. F. ^{[1
]}

Orlikovsky, A. A. ^{[1
]}

Burenkov, A. ^{[2
]}

Oechsner, R. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Phys & Technol, Moscow 117218, Russia

[2] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

来源：

SEMICONDUCTORS | 2013年 / 47卷 / 02期

关键词：

EFFECTIVE-MASS;

D O I：

10.1134/S1063782613020218

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The lack of an OFF-state has been the main obstacle to the application of graphene-based transistors in digital circuits. Recently vertical graphene tunnel field-effect transistors with a low OFF-state current have been reported; however, they exhibited a relatively weak effect of gate voltage on channel conductivity. We propose a novel lateral tunnel graphene transistor with the channel conductivity effectively controlled by the gate voltage and the subthreshold slope approaching the thermionic limit. The proposed transistor has a semiconductor (dielectric) tunnel gap in the channel operated by gate and exhibits both high ON-state current inherent to graphene channels and low OFF-state current inherent to semiconductor channels.

引用

页码：279 / 284

页数：6

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