IMPACT IONIZATION INVESTIGATIONS ON ZNSE SCHOTTKY-BARRIER DIODES

被引：16

|

作者：

MACH, R ^{[1
]}

LUDWIG, W ^{[1
]}

机构：

[1] DAWB,ZENT INST ELEKTR PHYS,BERLIN,EAST GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 23卷 / 02期

关键词：

D O I：

10.1002/pssa.2210230221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：507 / 516

页数：10

相关论文

共 50 条

[21] DIODES WITH SCHOTTKY-BARRIER UNDER UNIFORM PRESSURE
VILISOV, AA
FILONOV, NG
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1977, (02): : 146 - 148
[22] AU-SIC SCHOTTKY-BARRIER DIODES
WU, SY
CAMPBELL, RB
SOLID-STATE ELECTRONICS, 1974, 17 (07) : 683 - 687
[23] ON THE CONTRIBUTION OF RECOMBINATION CURRENTS IN SCHOTTKY-BARRIER DIODES
WOODS, NJ
HALL, S
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) : 2295 - 2297
[24] Investigation of the Parameters of Schottky-Barrier Diodes.
Wosinski, Tadeusz
Jelenski, Andrzej
Elektronika, 1975, 16 (05): : 195 - 198
[25] INTERFACES AND RECOMBINATION CURRENTS IN SCHOTTKY-BARRIER DIODES
LADBROOKE, PH
SOLID-STATE ELECTRONICS, 1972, 15 (01) : 139 - +
[26] SUBMILLIMETER DETECTORS USING SCHOTTKY-BARRIER DIODES
AVERIN, SV
POPOV, VA
RADIOTEKHNIKA I ELEKTRONIKA, 1977, 22 (05): : 1057 - 1061
[27] HYDROGEN-SENSITIVE SCHOTTKY-BARRIER DIODES
ITO, K
SURFACE SCIENCE, 1979, 86 (JUL) : 345 - 352
[28] THERMALLY OXIDIZED MESA SCHOTTKY-BARRIER DIODES
GUTKNECHT, P
STRUTT, MJO
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (02) : 172 - 173
[29] METHOD OF FORMING SCHOTTKY-BARRIER DIODES WITH VARIABLE BARRIER HEIGHT
BHATIA, HS
SCHNITZEL, RH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C96 - C96
[30] A NEW TECHNIQUE FOR THE DETERMINATION OF BARRIER HEIGHT OF SCHOTTKY-BARRIER DIODES
CHATTOPADHYAY, P
SOLID-STATE ELECTRONICS, 1995, 38 (03) : 739 - 741

← 1 2 3 4 5 →