A NEW TECHNIQUE FOR THE DETERMINATION OF BARRIER HEIGHT OF SCHOTTKY-BARRIER DIODES

被引：55

作者：

CHATTOPADHYAY, P

机构：

[1] Department of Electronic Science University College of Science 92 Acharyya Prafulla, 700 009, Chandra Road Calcutta

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 03期

关键词：

D O I：

10.1016/0038-1101(94)00167-E

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：739 / 741

页数：3

共 50 条

[1] NEW TECHNIQUE FOR THE DETERMINATION OF SERIES RESISTANCE OF SCHOTTKY-BARRIER DIODES
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[J]. SOLID-STATE ELECTRONICS, 1992, 35 (07) : 1023 - 1024
[2] BARRIER HEIGHT CHANGE IN MIS SCHOTTKY-BARRIER DIODES
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[J]. SOLID-STATE ELECTRONICS, 1982, 25 (01) : 79 - 80
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C96 - C96
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[9] A PHOTOVOLTAIC STUDY OF CURRENT TRANSPORT AND ITS INFLUENCE ON THE DETERMINATION OF THE SCHOTTKY-BARRIER HEIGHT IN SCHOTTKY DIODES
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[10] ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS
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